SBIR/STTR Research Award
Ballistic Missile Innovative Radar and RF Products
Award amount
$69,849Program and phase
SBIR · Phase IAward year
2003Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- INTRINSIC SEMICONDUCTOR CORP.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Development of ultra pure silicon carbide (SiC) substrates is proposed. The Company has a unique and proprietary technique for making such substrates that will be used. Such substrates will be used in development of gallium nitride device technologies.Furthermore, a number of characterization tasks will be performed on the wafers produced under to proposed program. Ultra pure SiC substrates will have a wide range of use both in military and commercial applications. Next generation radar systems thatrequire higher power densities devices will benefit from such electrically insulating SiC substrates. Both SiC and GaN based transistors can produced on SiC wafers.
Technology keywords
Not reported