BURIED HETROSTRUCTURE PBEUSETE/PBSNTE LONG WAVELENGTH TUNABLE DIODE LASERS

THE GOAL OF THIS PROJECT IS TO USE MOLECULAR BEAM EPITAXY (MBE) OF PBSNTE AND PBEUSETE ON PBTE SUBSTRATES TO DEVELOP AND FABRICATE BURIED HETEROSTRUCTURE (BH) TUNABLE SINGLE-MODE DIODE LASERS EMITTING IN THE 15MUM TO 28MUM SPECTRAL REGION WITH OPERATION TEMPERATURE IN EXECESS OF 20 K. THE BH DIODE LASERS SHOULD DELIVER SINGLE-MODE OUTPUT POWER IN THE RANGE OF 0.1-1.OMW. THRESHOLD CURRENTS AT 20 KAND 80 K SHOULD NOT EXCEED 2 MA AND 11 MA, RESPECTIVELY. TEMPERATURE TUNING RATES SHOULD BE BETWEEN 3 CM(-1)/K TO 4 CM(-1)/K (A FIXED PB SALT MATERIAL PROPERTY) AND CURRENT TUNING RATE SHOULD BE MINIMIZED TO VALUES BELOW 1800 MHZ/MA,THUS DIRECTLY SATISFYING NASA REQUIREMENTS FOR LOCAL OSCILLATORS FOR HETERODYNE DETECTION. THESE LASERS SHOULD ALSO EXHIBIT LONGER MODE TUNING IN THE RANGE OF 1.5-4CM(-1) PER MODE, AND HIGH-TEMPERATURE, CONTINUOUS-WAVE (CW) OPERATION IN EXCESS OF 80 K. IN PHASE I OF THIS PROGRAM THECLADDING LAYER COMPOSITION, THE DOPING PROFILE, AND THE ACTIVE LAYER THICKNESS FOR A DIODE LASER EMITTING AT 15MUM WILL BE DETERMINED. TWO WORKING DEVICES SATISFYING THE ABOVE CONDITIONS WILL BE DELIVERED FOR EVALUATION. THE GOAL OF THIS PROJECT IS TO USE MOLECULAR BEAM EPITAXY (MBE) OF PBSNTE AND PBEUSETE ON PBTE SUBSTRATES TO DEVELOP AND FABRICATE BURIED HETEROSTRUCTURE (BH) TUNABLE SINGLE-MODE DIODE LASERS EMITTING IN THE 15MUM TO 28MUM SPECTRAL REGION WITH OPERATION TEMPERATURE IN EXECESS OF 20 K. THE BH DIODE LASERS SHOULD DELIVER SINGLE-MODE OUTPUT POWER IN THE RANGE OF 0.1-1.OMW. THRESHOLD CURRENTS AT 20 KAND 80 K SHOULD NOT EXCEED 2 MA AND 11 MA, RESPECTIVELY. TEMPERATURE TUNING RATES SHOULD BE BETWEEN 3 CM(-1)/K TO 4 CM(-1)/K (A FIXED PB SALT MATERIAL PROPERTY) AND CURRENT TUNING RATE SHOULD BE MINIMIZED TO VALUES BELOW 1800 MHZ/MA,THUS DIRECTLY SATISFYING NASA REQUIREMENTS FOR LOCAL OSCILLATORS FOR HETERODYNE DETECTION. THESE LASERS SHOULD ALSO EXHIBIT LONGER MODE TUNING IN THE RANGE OF 1.5-4CM(-1) PER MODE, AND HIGH-TEMPERATURE, CONTINUOUS-WAVE (CW) OPERATION IN EXCESS OF 80 K. IN PHASE I OF THIS PROGRAM THECLADDING LAYER COMPOSITION, THE DOPING PROFILE, AND THE ACTIVE LAYER THICKNESS FOR A DIODE LASER EMITTING AT 15MUM WILL BE DETERMINED. TWO WORKING DEVICES SATISFYING THE ABOVE CONDITIONS WILL BE DELIVERED FOR EVALUATION.