SBIR/STTR Research Award

LARGE AREA NON-CONTAMINATING HIGH FLUX ATOMIC HYDROGEN SOURCE

Award identifier a81cb262d6397ca6e87f0dac87529fea8212efa19dc37d21a578a67eb10f2c2fAwarding agency Department of Defense · Missile Defense Agency

Award amount

$59,558

Program and phase

SBIR · Phase I

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
IONWERKS INC
Proposal award date
Not reported
Contract end date
Not reported
UEI
XFHSJJLN7ZQ7
Solicitation number
Not reported
Topic code
Not reported

Research abstract

A new approach to generating atomic hydrogen (and possibly N and O) will give atomic fluxes of 10(-19) atoms/cm(-2) over a three inch wafer positioned three inches in front of the source. Scalt up to larger areas may be possible in phase II. We will examine the use of this source as an alternative to hot filament assisted generation of atomic H for diamond thin film growth. Use of the source for MBE epitaxy especially in Si/Ge systems may be possible particularly if metallic contamination of the film by the source is successfully minimized.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

65 SBIR/STTR records share this UEI (1986–2021). Reported award amounts total $17,405,049. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Health and Human Services, Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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