Boron Nitride Capacitors for Advanced Power Electronic Devices

79564S Silicon carbide (SiC) is being used to break barriers with respect to the design and fabrication of high-temperature, high-power transistors, but capacitors remain the weak link in achieving higher temperature electronics. SiC devices have been demonstrated to operate safely at temperatures up to 400¿C, but at these temperatures, capacitors have been shown to severely degrade. High-temperature-capable capacitors will be needed for high temperature SiC-based power transistors. This project will develop boron nitride (BN) capacitors to match the silicon carbide transistors operating at temperatures above 300¿C. Phase I will incorporate long-life BN capacitors technology into advanced SiC components. First, layers for the BN-based capacitors will be grown and optimized. Then, the capacitors will be subjected to electrical and thermal characterization. Commercial Applications and Other Benefits as described by the awardee: High-energy density capacitors that can operate at excessive temperatures should find use in ballistic missiles, electric guns, and high power microwave sources; microwave systems for communications such as cellular telephony and data transmission; satellite communications systems; high power pulsed amplifiers for ground, airborne and space-based radar; and high frequency switching power supplies.