SBIR/STTR Research Award
On-Line Hydride Gas Process Monitor for Compound Semiconductor and Silicon Wafer Fabrication
Award amount
$70,576Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- Electron Transfer Tech
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The fabrication of III-IV compound semiconductors, such as GaAs, and silicon semiconductors requires the use of the hydride gases phosphine and arsine. The accuracte sensing of the concentration of these gases is essential for high yield device fabrication. Presently the only methods for detecting these gase for on-line process control are very expensive sensor units. In Phase I of these project, we propose the investigation of several new sensing techniques to develop a low cost (<$3000) hydride gas sensor for on-line process control and monitoring. In Phase II we will construct prototype hydride sensors and test them at several major semiconductor fabrication facilities. Anticipated Benefits: The development of a low cost on-line arsine and phosphine concentration sensor will improve semiconductor manufacturing efficiency through greater wafer yields.
Technology keywords
Not reported