Phase Two Development of Interconnect Technology Between Electronics and Multi-Waveband Infra Red Sensors

IR sensors are extremely valuable tools for a vast array of applications in areas ranging from astronomy to national security. The advancement of multi-waveband IR detectors faces serious hurdles due to the interconnection between the sensor elements andthe electronics substrates. The interconnect technology has emerged as the limiting factor in the signal processing and durability of these multi-waveband sensors. These problems are sometimes caused by the fill factor of the interconnect between thedetector and the electronics substrates, and/or the size of the interconnect metal (indium bump). The objective of this research project is the continued development of the interconnect technology from Phase I. MBI's goals are to produce an industrialinstrument for this novel interconnect-technology and to assemble a functioning IR detector array with 320x256 elements. This surpasses the proposal call goals. MBI assembly process utilizes the advantage of high-frequency electromagnetic waves to bondsemiconductor substrates. This process should enhance the performance of these detectors while lowering their production cost.Commercialization of IR sensors for many civilian and military applications require constant development to enhance performance and reduce costs, MBI's new technology presents an opportunity for such advancements in this as well as other high-technologyareas (e.g. MEMS).