GaN-based Submillimeter Wave Quantum Emitter

WaveBand Corporation proposes to develop a new source of electromagnetic waves in the terahertz spectral range. The source is based on an electrically driven III-Nitride semiconductor superlattice designed to deliver high-power and high-frequency currentoscillations. The fabrication technology employs a robust metal-organic vapor chemical deposition. The operating frequency is tunable by the driving voltage and can also be engineered by the geometry of the superlattice. The source is free fromgeometrical constraints that restrict the output power in resonant tunneling diodes. The source will find applications in target seekers, space communication systems, sensors, collision avoidance systems, and atmospheric sensing.The proposed terahertzsource belongs to a new generation of solid state microwave sources based on nonlinear electric properties of biased semiconductor superlattices and will be applicable to missile smart munitions, wireless communications, ultra-high-speed integratedcircuits, plasma diagnostics, remote sensing of toxic agents, radio astronomy and molecular spectroscopy, collision avoidance systems and surveillance radars. Active elements in the terahertz region will offer a bridge between microwave and opticalfrequencies in material systems, thus providing a broad range of applications in optical modulators and other optoelectronic devices and integrated circuits.