Novel Approach for AIN Boule Growth

TDI proposes to develop aluminum nitride bulk growth technique based on a new version of hydride vapor phase epitaxial (HVPE) method. The HVPE technique is a well-established, relatively cheap method to grow thick layers of GaN on sapphire and siliconcarbide substrates. Our recent experiments showed that AIN thick epitaxial layers can be grown by HVPE. The goal of Phase II project is to develop cost effective production technology for fabrication of 2 inch diameter single crystal AIN wafers.Research goals of the program are focused on defect density reduction and demonstration of 4 inch AIN wafers. Large area, high quality AIN substrates will find a host of applications in optoelectronics, high-power, high-frequency, and high-temperatureelectronics for military and industrial needs.