SBIR/STTR Research Award

PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH FLASHOVER SUPPRESSION

Award identifier 1862cd6a4db849a3322745c4ec5e01ef809d3bf7338a6f109c2c4d920ad14bc5Awarding agency Department of Energy

Award amount

$499,864

Program and phase

SBIR · Phase II

Award year

1990

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Tetra Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
DQDEMSJD89L5
Solicitation number
Not reported
Topic code
Not reported

Research abstract

PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES (PCSSS) PRESENTLY HAVE THE GREATEST POTENTIAL FOR DRAMATIC PERFORMANCE ENHANCEMENTS FOR HIGH POWER PULSED APPLICATIONS. HOWEVER, SURFACE FLASHOVER SEVERELY LIMITS THE MAXIMUM VOLTAGE THEY CAN STAND OFF IN THE OPEN STATE. APPLICATION OF A PROPRIETARY TECHNIQUE TO PCSS CAN OVERCOME THIS LIMITATION. THE TECHNIQUE HAS THE POTENTIAL TO INCREASE BREAKDOWN LASER TRIGGER POWER REQUIREMENTS BY A FACTOR OF 25. THE PROPRIETARY TECHNIQUE HAS DEMONSTRATED FIVEFOLD IMPROVEMENT OVER CONVENTIONAL VACUUM INSULATORS FOR PULSED POWER APPLICATIONS. IN PHASE I CONCEPT FEASIBILITY WILL BE STUDIED BY MEASURING THE IMPROVEMENT IN PCSS "DARK" STANDOFFVOLTAGE IN A HIGH VOLTAGE BREAKDOWN TEST FACILITY.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

54 SBIR/STTR records share this UEI (1983–1996). Reported award amounts total $9,185,480. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Science Foundation, National Aeronautics and Space Administration

Agency intelligence

Department of Energy

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