SBIR/STTR Research Award

DEPOSITION OF YTTRIUM STABILIZED ZIRCONIA ON SILICON TO FORM SILICON ON INSULATOR SUBSTRATES

Award identifier 000d7ff8a9c519fa2c0b70a1635007e89ce46689991ee172ff419a4004170086Awarding agency National Science Foundation

Award amount

$50,000

Program and phase

SBIR · Phase I

Award year

1993

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Spire Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
RG46KJGARZF4
Solicitation number
Not reported
Topic code
Not reported

Research abstract

HETEROEPITAXIAL GROWTH OF YTTRIA STABILIZED ZIRCONIA (YSZ) ON SILICON, WHICH CAN BE USED FOR SILICON-ON-INSULATOR AND AS A SUBSTRATE FOR FERROELECTRIC AND HIGH TEMPERATURE SUPERCONDUCTING MATERIALS IS BEING DEMONSTRATED. BECAUSE IT OFFERS POTENTIAL IMPROVEMENTS IN THE QUALITY OF TODAY'S TECHNOLOGIES AT A FRACTION OF THE COST, ITS DEVELOPMENT COULD OVERCOME A MAJOR BARRIER TO WIDESPREAD USE OF SILICON-ON-INSULATOR SUBSTRATES. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) IS USED TO DEPOSIT YSZ ON HYDROGEN-PASSIVATED SILICON. THE DEPOSITED FILMS ARE FULLY CHARACTERIZED FOR COMPOSITION, CRYSTAL STRUCTURE, AND ELECTRICAL PROPERTIES.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

429 SBIR/STTR records share this UEI (1983–2014). Reported award amounts total $73,907,551. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Energy, Department of Health and Human Services, Department of Commerce

Agency intelligence

National Science Foundation

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