SBIR Phase I: Resist for DUV Lithography

This Small Business Innovation Research Phase I project is to demonstrate the feasibility of using semiconductor nanocrystals to produce a resist that responds quadratically to the exposure light intensity for optical lithography. More specifically, this project will develop semiconductor nanocrystals embedded in a polymer binder, together with an acid generator, as a resist for deep ultra-violet (DUV) manufacturing. This resist will improve the resolution of the lithography process and enable double exposure, which is urgently required in order to extend optical lithography beyond the 45 nm mode. The availability of this resist for 193 nm semiconductor wafer manufacturing will improve resolution and increase the single-exposure process window. More importantly, it will enable a cost-effective double exposure strategy, allowing fabrication of features beyond 45 nm with optical lithography, keeping the industry on the well-known Moore's law curve. A double exposure strategy keeps the industry from a disruption of Moore's law at the 32 nm node, and possibly beyond. It saves the industry from switching to more expensive and unreliable alternatives, such as extreme ultra-violet (EUV) lithography.