Development of Materials for Spectral Hole Burning Applications

Spectral hole-burning materials offer an extra degree of freedom to enhance optical memory and processing for computer and processor architecture. The understanding of these materials is limited and they have not been utilized in practical applications. Typical candidate materials are doped crystals with magnetic spins on dopant ion and non-magnetic host crystal ions. In addition to these properties it is important to grow the chosen material in single crystal form in large enough sizes for devices. Based upon the available information, two materials have been selected, viz., Eu:Y2Si05 and Eu:YAG. During the proposed Phase I program the crystal growth characteristics of the materials will be identified and potential use evaluated. Eu:Y2Si05 has exhibited dephasing time (822 us) whereas Eu:YAG is chosen, in spite of A1 ions in the host, because it is a well-understood host crystal. Based upon data, a program will be developed to evaluate materials for hole-burning applications.