High power GaN pn diodes on bulk GaN substrates

TDI proposes to develop GaN pn diodes for power fast-switching applications. The devices will employ low defect bulk n+-GaN substrates, low doped n-GaN voltage-blocking region grown, and Ga(Al)N p+-emitter. The main target of the program is todemonstrate GaN power rectifiers with blocking voltage > 3.3 kV, on-state resistance 10 A. The main goal of the Phase I is to prove the concept and demonstrate GaN pn diodes with blocking voltage over 1.2kV. The use of bulk GaN substrates with reduced defect density will allow the fabrication of devices with excellent forward current characteristics and high reverse breakdown voltages with low leakage currents. Factors limiting device area and on-stateresistance will be investigated. Device operations at high temperatures (up to 300oC) will be studies. The Phase II research program will be focused on increase of forward current capabilities and demonstration of packaged device stable for switchingoperations. High power GaN pn diodes will find a host of applications for fast-switching applications in military vehicles, air platforms, space platforms, and in commercial components like industrial motor drives, power converters and power supplies.