SBIR/STTR Research Award

Large Area, High-Speed Photodiode using Metal-Semiconductor-Metal (MSM) Device

Award identifier 8cc8df399e36272399da0ce283fd9f762c20279b854f3dd9def7ae879eee0d8fAwarding agency Department of Defense · Navy

Award amount

$69,998

Program and phase

SBIR · Phase I

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
F&H APPLIED SCIENCE ASSOC., INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This proposal is concerned with a large area, high speed photodetector with gain. It involves the incorporation of a metal-semiconductor-metal (MSM) diode as the anode in a large area phototube that currently uses a Schottky diode. Present photodetectors either have a large area and low speed or a small area and high speed. The proposed phototube, or the intensified photodiode (IPD) is expected to exhibit a gain of greater than 10E3 , noise figure less than 1.5 dB, and a bandwidth of greater than 10 GHz, while maintaining a 10mm or larger active area. The device will be useful in free space terrestrial, shipboard and satellite communications, as well as a variety of lidar applications. Phase I is the feasibility study, i.e., the design of a prototype of the large area, high speed photodetector (EDMSM-IPD) device, while Phase I Option is the proof-of-concept demonstration which characterizes and demonstrates that the concept works.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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