BARRIER LAYER FOR EPITAXIAL BATIO3 FILMS ON SILICON

SINGLE CRYSTAL BATIO3 HAS ELECTRO-OPTIC AND PHOTOREFRACTIVE PROPERTIES THAT ARE AMONG THE MOST DESIRABLE OF ALL INORGANIC MEDIA. THE MATERIAL ALSO POSSESSES FERROELECTRIC PROPERTIES AND AN EXCEPTIONALLY HIGH DIELECTRIC CONSTANT, WHICH MAKE BATIO3 FILMS HIGHLY ATTRACTIVE FOR RADIATION HARD AND DRAM ELECTRONIC MEMORIES. USE OF BATIO3 FILMS FOR INTEGRATED ELECTRO-OPTICS WILL REQUIRE LOW OPTICAL LOSSES, WHICH IS TYPICALLY REALIZED BY GROWTH ON SINGLE CRYSTAL SUBSTRATES, WHICH COST HUNDREDS OF DOLLARS PER SQUARE INCH AND ARE NOT EASILY INTERFACED WITH SI INTEGRATED CIRCUITS. RECENTLY THE USE OF BARRIER LAYERS WAS DEMONSTRATED IN THE GROWTH OF HIGH TEMPERATURE SUPERCONDUCTING THIN FILMS ON SI. SINCE THESE MATERIALS ARE SIMILAR TO BATIO3 THIS NOVEL APPROACH MAY ALLOW THE GROWTH OF EPITAXIAL BATIO3 THIN FILMS ON SILICON, ALTHOUGH LOWER GROWTH TEMPERATURES ARE NEEDED TO ALLOW "SILICON-LIKE" PROCESSING. IN PHASE I THE FEASIBILITY OF LOW TEMPERATURE PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR DEPOSITION (PE-MOCVD) OF MGAL2O4 BARRIER LAYERS ON SI [100], WILL BE DETERMINED. IN PHASE II AN INTEGRATED PROCESS FOR THE GROWTH OF EPITAXIAL BATIO3 ON THE MGAL2O4 / SI [100] SUBSTRATE WILL BE DEVELOPED. THE ECONOMIC ADVANTAGES OF THIS UNIFIED APPROACH FOR GROWTH OF BATIO3 FILMS ON SILICON WILL STIMULATE THE MANUFACTURE OF LOW COST ELECTRO-OPTIC DEVICES.