SBIR Phase II: Ultra-Low k Interlayer Dielectrics for 22 nm Technology Node and Beyond

This Small Business Innovation Research Phase II project is to develop a new technology for manufacturing ultra-low dielectric constant materials for leading-edge logic devices for the 22 nm technology node and beyond. The research approach is based on the bottom-up synthesis of honeycomb-like nano-structured films in which porogen component is pre-built into the nano-sized cells and can be decomposed in a strictly controlled manner. By extending microchip miniaturization this project may impact information technologies and related fields. This program may also significantly expand the overall knowledge and understanding of nano-structured materials and nanotechnology in general.