CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES

CONFORMAL VAPOR PHASE EPITAXY (CVPE) IS A NEW TECHNIQUE FOR TWO-DIMENSIONAL CONSTRAINED GROWTH OF THIN SEMICONDUCTOR FILMS USING A HALIDE VAPOR TRANSPORT PROCESS. THIS TECHNIQUE WILL BE APPLIED TO THE GROWTH OF GAAS AND INP FILMS ON SILICON AND SAPPHIRE SUBSTRATES. EPITAXIAL-LATERALOVERGROWTH WITH HIGH ASPECT RATIOS IS ACHIEVED BY CONFINING GROWTH TO A THIN VOID SPACE BOUNDED BY AN OXIDE-MASK COATINGTHE SUBSTRATE AND AN ADJACENT OVERHANGING MASK. THIS TECHNIQUE HAS EXCELLENT POTENTIAL FOR REDUCING THE DETRIMENTAL EFFECTS OF LATTICE-MISMATCH AND THERMAL STRESS TO YIELD LOW-DEFECT HETEROEPITAXIAL FILMS. THE FEASIBILITY OF CVPE FOR GAAS-ON-SILICON, GAAS-ON-SAPPHIRE, INP-ON-SILICON, AND INP-ON-SAPPHIRE WILL BE STUDIED WITH EXPERIMENTAL EMPHASIS ON GAAS-ON-SILICON. HETEROEPITAXIAL MATERIAL WILL BE CHARACTERIZED AND MINORITY CARRIER DEVICES,SUCH AS PHOTODETECTORS AND LEDS, FABRICATED WITH THE HETEROEPITAXIAL FILMS, WILL BE EVALUATED.