P-Type Contact Technologies for GaN-Based Optoelectronics

SDL proposes to develop very low resistance contacts for AlGaInN devices. These contacts will be crucial to the develop of continuous-wave nitride-based laser devices, high-power blue and green light emitting diodes, and high-power bipolar GaN electronic devices. Semiconductor lasers require current densities of ~1kA/cm(2). With current GaN contact technologies this drive current density leads to extremely high drive voltages, causing excessive heat generation and currently preventing anything but pulsed laser operation. The technique described in this proposal will enable the operation of efficient semiconductor laser diodes in the 350-450 nm range. These laser diodes will find applications in high density data storage, advanced color printing, solar-blind communication, submarine communication and general displays. In addition, electronic components will greatly benefit from this contact technology via a reduction in power consumption and lower RC time constants, thus improving high-speed operation.