SBIR/STTR Research Award

NORMAL INCIDENT N-TYPE STRAINED LAYER INGAAS/GAAS MULTIPLE QUANTUM WELL IR DETECTOR ARRAY

Award identifier eb974ccbdaccfffa54f99fcea8ad17b391b392fb20af9d466d7e67482ae7575eAwarding agency Department of Defense · Missile Defense Agency

Award amount

$59,505

Program and phase

SBIR · Phase I

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Alpha Photonics, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Alpha Photonic Inc. (API) proposes, to develop an n-type strained layer InGaAs/GaAs multiple quantum well (MOW) structure for normal incident long wavelength (>12 um) infrared (IR) detection. This structure offers high sensitivity and a fast response time. The detection wavelength can be easily tuned by tailoring the MOW structure. The detection mechanism is based on the coupling of the conduction and valence bands, because the relatively narrow bandgap of InGaAs produces an intersubband matrix element for normal incident light. In Phase I, API will analyze the normal incidence mechanism, as well as tunability of wavelengths above the 12 um IR range. Several InGaAs/GaAs MQW structures will be grown using the optimized device parameters, and their optical properties will be assessed.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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