SBIR/STTR Research Award

Ultrasonic Thin Film Thickness Measurement

Award identifier 5c09d1433861ad59dc6d2c8c31869b4647325c101bc802a071eb7a5642a333ecAwarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$380,835

Program and phase

SBIR · Phase II

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
General Science & Technology
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The objective of this proposal is to develop an ultrasonic technique for the measurement of the thickness of thin films in an integrated circuit manufacturing environment. Our approach is to use ultrasound in the regime where the wavelength is comparable to that of light; that is in the frequency range of 1-10 GHz. In this range, it will be possible to measure the thickness of very thin and opaque films. Also, because the mechanical impedances of materials vary significantly more than their dielectric constants, we expect to be able to measure the individual thicknesses of layered thin films. An XY scan will be made to generate film thickness contour map of the wafer. ANTICIPATED BENEFITS: This project will demonstrate the feasbility of a technique which can be developed into a commercial thin/thick film thickness measurement system. Economical, quantitative, simple, inexpensive, and nonrestrictive measurements of the thickness of transparent and opaque, simple and multiple films, will have a great impact on the cost and quality control of thin film deposition in an integrated circuits manufacturing environment.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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