Non-Volatile Memory based on Silicon-nanocrystals

Recently, there has been more emphasis on a system-on-a-chip (SOC) to integrate logic, analog functions, volatile and non-volatile memory onto a single chip. In order to overcome limitations of conventional floating gate non-volatile memory devices, we areproposing the non-volatile memory elements based on silicon nanocrystals. The silicon nanocrystals will be fabricated in the gate oxide of the conventional complementary metal oxide semiconductor ( CMOS) field effect transistors by ion implantation. Theimplanted silicon ions will be recrystallized by furnace and rapid thermal annealing. The resulting memory element expected to program at lower voltages with better endurance and retention. In the Phase II project, we are going to optimize the nanocrystalbased non-volatile memory technology and implement it in conventional deep submicron CMOS VLSI and ULSI process.This technology has at least two obvious commercial applications. First because of its performance advantage it can replace convention EEPROM.Second, because of the simplicity of the process it is ideal for system-on-a-chip applications.