SBIR/STTR Research Award
ELECTRON TRAPPING OPTICAL READ/WRITE/ERASE MEMORY
Award amount
$200,000Program and phase
SBIR · Phase IIAward year
1987Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Quantix Corp
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
RECENTLY HIGH EFFICIENCY PHOSPHORS HAVE BEEN DEVELOPED AT QUANTEX. THESE MATERIALS CONTAIN EXTREMELY REPRODUCIBLE TRAPS, THEREFORE THEY ARE CALLED ET MATERIALS. THE ELECTRON TRAPPING FROM VISIBLE LIGHT PRODUCES EXTREMELY LONG TERM STORAGE, WHICH CAN BE INSTANTLY INTERROGATED BY INFRARED TO PRODUCE A VISIBLE OUTPUT. CONSEQUENTLY, A TOTALLY PHOTONIC READ/WRITE/ERASE MEMORY CAN BE CONSTRUCTED. IT IS PROPOSED TO FABRICATE EXPERIMENTAL FILM STRUCTURES WITH THESE ET MATERIALS AND EVALUATE PHOTONIC MEMORY PROPERTIES, IN TERMS OF INFORMATION DENSITY, THROUGHPUT RATES, SIGNAL-TO-NOISE RATIO, ETC.
Technology keywords
Not reported