EMP AND HPM SUPPRESSION TECHNIQUES

Survival of present day microelectronic circuits depends on their protection from self generated and external electromagnetic interference. This proposal is oriented toward the class of interference generally referred to as overvoltage transients. Means for mitigating these transients include gas discharge tubes, and various solid state devices. Each of these has their own advantages in particular circumstances. In the late 1980's, a new class of metal polymer composites were introduced that hold the potential for replacing all of the above devices in the majority of circumstances at greatly reduced cost and weight and with enhanced flexibility in device and system design. However, it appears that in previous efforts, a dominantly empirical approach was followed, with insufficient understanding of the underlying electrophysical phenomena. A first step toward correcting that situation was taken by Integrated Sciences under the sponsorship of the U. S. Army's Harry Diamond Laboratories, wherein the quantum tunneling aspects of the materials were successfully explored and demonstrated. The object of the present proposal is to complete that effort by an analysis and demonstration of the mechanisms of polymeric avalanche, and the tradeoffs between metallic quantum tunneling, polymeric avalanche, material, morphology, and device geometry.