128X128 ELEMENT MONOLITHIC DUAL BAND HGCDTE STARING ARRAYS

MISSILE SEEKERS MUST DETECT TARGETS IN DUAL BANDS (3-5 UM AND 8-12 UM). THEY NOW USE HYBRID ASSEMBLY OF TWO SEPARATE ARRAYS, WHICH INCREASES THE POWER, CONSUMPTION, THE WEIGHT, AND THE COST. WE WILL DEVELOP MONOLITIHIC DUAL BAND 128X128 STARING ARRAYS ON HGCDTE MATERIAL. THE INNOVATION IS THE DETECTION OF BOTH LONG AND SHORT WAVE SIGNALS IN THE SAME PIXEL SIMULTANEOUSLY. FABRICATION METHODS ARE DEVELOPED TO ACHIEVE PIXEL CO-LOCATION. THE METHODS ARE SUCH THAT CROSSTALK AMONG ADJACENT DIODES AND BETWEEN WAVE BANDS ARE ELIMINATED. CIRCUITS ARE DESIGNED TO PERFORM SIMULTANEOUS DETECTION IN TWO WAVE BANDS. A NEW MOCVD EPITAXIAL GROWTH BY PHOTOCHEMICAL TECHNIQUE (200C GROWTHO IS INITIATED (REACTOR 1). DUAL BAND WAFERS AND P-N JUNCTIONS ARE ALREADY GROWN IN A STANDARD MOCVD REACTOR (REACTOR 2). THESE STRUCTURES ARE GROWN WITH A WIDE BAND-GAP CAP LAYER TO IMPROVE PERFORMANCE. A NEW MULTI-LAYER METAL SCHEME IS DEVELOPED TO IMPROVE RELIABILITY. A SET OF MASKS FOR 4X4 ELEMENT TEST ARRAYS ARE DESIGNED AND ALL MASK LEVELS ARE OBTAINED.