Nonvolatile EPIR Colossal Magnetoresistive Memory

The objective of this proposal is to demonstrate the feasibility of producing radiation-hardened, nonvolatile EPIR colossal magnetoresistive semiconductor Non-Destructive Read Out (NDRO) memory for military and space applications, such as for SBIRS-Low.The approach in of this Phase I program is to characterize PrCaMnO (PCMO) thin films for use in radiation-hardened nonvolatile memories and to determine the feasibility of using these films with standard platinum electrodes in nonvolatile memory cells.Based on feasibility, a possible memory cell layout will be suggested for development under a Phase II program. Phase II is proposed to be the development, fabrication and characterization of an EPIR colossal magnetoresistive test chip and Phase IIIproposes to find a sponsor to commercialize the technology by producing products to meet MDA needs.While Flash memory can provide the nonvolatile memory densities required for many aerospace applications, it is fundamentally not radiation tolerant. Even with shielding, Flash memory cannot meet many radiation requirements. EPIR colossalmagnetoresistive technology may provide radiation tolerant nonvolatile NDRO memory that does not require shielding. The use of this technology can have an important major impact on strategic and space systems that require radiation hardened nonvolatileNDRO memory. The proposed SBIR research can be expanded into radiation-hardened EPIR colossal magnetoresistive memory products for broad U. S. military and space markets. The development of EPIR colossal magnetoresistive memory could be of major importance for strategic and space systems that require high-density radiation hardened nonvolatile memory. Due to the multiple stable values possible with these materials, thedevelopment of analog devices that can be used in radiation hardened military and space application should also result.