Filterless Multicolor Image Sensors on SOI Structures

"Spire proposes to develop high-efficiency filterless silicon-based multi-color photodiode arrays suitable for spectroscopy and imaging applications in the UV to near-IR bands. The innovation, patented by Spire, is the use of a thin filmsilicon-on-insulator (SOI) structure in the active device region, which enables fabrication of wavelength-selective photodiodes. In these devices, the long cut-off wavelength is determined by the thickness of the active silicon layer on top. The filmthickness can, for example, be tailored so that it absorbs and detects UV photons while remaining transparent to longer visible and IR wavelengths (i.e., a solar-blind photodiode). Spire has already demonstrated the most efficient Si-based single elementUV-selective photodiodes using the proposed technology. Using a highly innovative design, we now propose to fabricate monolithically multicolor photodiode arrays on SOI wafers in the 280nm to 900nm wavelength range, to address MDA's need for such devices.In Phase I, Spire will demonstrate one dimensional filterless and gratingless photodiode arrays capable of sampling light at wavelengths of about 450nm, 650nm, and 900nm. Phase II will optimize process parameters for fabrication of photodiodes with thedesired wavelength-selectivity, and Spire will build, test and deliver a three-color two-dimensional high-resolution camera prototype to MDA. Low-cost spectrometers, radiometers, and image sensors based