SBIR/STTR Research Award
High-Power Pulsed Laser Diode Driver Utilizing Low Tempature Growth GaAs Power Switches
Award amount
$77,275Program and phase
SBIR · Phase IAward year
1995Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Mellwood Laboratorytories,
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
The proposed research entails the development of a pulsed power driver capable of producing an electrical pulse with peak currents greater than 200 amps, peak powers greater than 200 kilowatts, and repetition rates greater than 10 kHz. MellWood Laboratories, Inc. has developed an entirely solid state system to create these high power pulses. The switching device consists of a monolithically integrated light emitting diode (LED) and a high power metal-semiconductor-metal (MSM) photo-switch. The integrated LED optically switches the MSM photoconductor. The vertical integration of an A1GaAs LED with an annealed low temperature growth A1GaAs MSM photoconductive switch allows a new class of high power devices to be developed. This high-power, compact, solid state pulsed power driver will be utilized to drive pulsed laser diodes for such applications as LIDAR.
Technology keywords
Not reported