FABRICATION AND MEASUREMENT OF ELECTRICAL AND OPTICAL PROPERTIES OF GALIUM NITRIDE BASED MULTIPLE QUANTUM WELLS FOR VISIBLE AND UV OPTOELECTRONIC DEVICES

THE RESEARCHERS PROPOSE A PROGRAM TO FABRICATE SINGLE CRYSTAL MULTIPLE QUANTUM WELL STRUCTURES IN ALXGAL-XN, AND TO MEASURE THE ELECTRO-OPTICAL PROPERTIES OF THE MATERIAL SYSTEM. THEIR PROGRAM IS SIGNIFICANT DUE TO THE POTENTIAL OF USING ALXGAL-XN MULTIPLE QUANTUM WELLS FOR UNIQUE ELECTRO-OPTIC AND OPTOELECTRONIC DEVICES OPERATING IN THE ULTRAVIOLET AND VISIBLE PARTS OF THE SPECTRUM. THEY SPECIFICALLY DESIRE TO FABRICATE SUCH A SOLID STATE SOLAR BLIND UV SENSOR UNDER A PHASE II PROGRAM. DUE TO ITS LARGE BANDGAP (3.6 TO 6.2 EV FOR X=0 TO 1) ALXGAL-XN IS POTENTIALLY A VERY USEFUL MATERIAL SYSTEM FOR FABRICATING SOLAR-BLIND UV DETECTORS AND UV AND VISIBLE FILTERS. A SUCCESSFUL IMPLEMENTATION OF THEIR PROGRAM WILL SIGNIFICANTLY INCREASE THE UNDERSTANDING OF THE ELECTRICAL, OPTICAL AND ELECTRO-OPTICAL PROPERTIES OF THIS MATERIAL SYSTEM. THIS WILL BE SIGNIFICANT FROM THE DEPARTMENT OF DEFENSE AS WELL AS A COMMERCIAL APPLICATIONS PERSPECTIVE. THE PROGRAM WILL BE THE FIRST EFFORT TO INCREASE THE SPHERE OF APPLICABILITY OF MULTIPLE QUANTUM WELL BASED OPTOELECTRONICS TO THE VISIBLE AND ULTRAVIOLET SPECTRAL REGION. THE ALXGAL-XN MULTIPLE QUANTUM WELL STRUCTURES WILLBE DEPOSITED USING LOW PRESSURE MOCVD AND CHARACTERIZED USING THE COMPUTER CONTROLLED TEST FACILITIES AT APA.