Low Power GaAs Enhancement-Depletion Technology Using Native A1203 as an Insulator

WideGap Technology (WiTech) proposes to develop native oxide based electronics in Gallium Arsenide (GaAs) technology that has the potential of revolutionizing the high speed IC industry. With the proliferation of wireless communications, a huge market has opened up for efficient, low power, high speed electronics. This demand can be met by ultra low power dissipation, high speed Enhancement-Depletion mode III-V compound Semiconductor FET technology. Moreover, there are stringent demands on the efficiency and linearity of the transistor amplifiers for wireless applications. For an FET technology to meet the above requirements, it is necessary to completely eliminate gate and substrate leakage currents. We propose to use the wet-oxide of alxGa1-xAs as a gate insulator and buffer insulator to enable this new GaAs based electronics family. The overall goal of Phase I of this project will be to demonstrate the use of al2O3 as a gate insulator for GaAs based MISFETs and as a buffer layer insulator for the GOI technology. This will involve FET fabrication and development by WiTech and device simulation work by Scientific Research Associates, Inc. The project will lay the foundation for an E-D (Enhancement-Depletion) logic based IC technology and a high performance, high efficiency microwave power technology.