Integrated Focal Plane Imaging Sensors Sensitive in 200-300 nm UV Band

An approach exploring a new novel wide bandgap semiconductor instead of AlGaN for solar blind UV detectors and imaging sensors sensitive in 200-300 nm wavelengths is proposed. The excellent properties of the new material such as bandgap cut-off wavelength of 281 nm, tunability of the bandgap, high resistivity and transparency in visible spectrum hold promise for successful fabrication of UV detectors. Al-free nature of the crystal could alleviates the problems associated with Al0,5GaO,5N. Growth of the novel crystal on Si(l 11) substrate via an intermediate 3C-SiC(l 11) offers advantages in terms of low cost, large area as well as the prospect of monolithic integration of the sensors with Si IC and SiC devices. The exact lattice match of the new material with SiC promises growth of detector quality material. Availability of n- and p-type conducting p-SiC film on silicon permits design of the sensors with vertical configuration. In Phase I, attention will be focused on growth of the new crystal on 3C-SiC(lll)/Si(lll) substrate and estimation of the feasibility of the UV detectors.