MULTI-COLOR (HGTE)X(INSB)1-X ARRAY

EPITAXIAL GROWTH OF MULTILAYERS OF (HGTE)X(INSB)1-X ON SILICON-ONSAPPHIRE (SOS) SUBSTRATES BY MOLECULAR BEAM EPITAXY (MBE) HAS BEEN PROPOSED. THE MBE TECHNIQUE CAN PRODUCE HIGH-QUALITY MULTIEPILAYERS OF (HGTE)X(INSB)1-X WITH DIFFERENT X VALUES, WHICH WILL GIVE RISE TO DIFFERENT CUTOFF WAVELENGTHS IN THE INFRARED SPECTRAL REGION. THUS, MULTICOLOR DETECTOR CAN BE MADE WITH THESE MULTIEPILAYER STRUCTURES ALONG WITH READOUT ELECTRONICS WHICH ARE ALSO FABRICATED ON THE SAME SOS SUBSTRATE. THE PROPOSED EFFORT IS PHASE I OF A THREE PHASE PROGRAM, WITH PHASE I TASKED TO DEFINE THE MBE GROWTH PROCESSES AND DESIGN THE EQUIPMENT MODIFICATIONS FOR FABRICATING THE (HGTE)X(INSB)1-X MULTIEPILAYERS AND THE MULTICOLOR DETECTOR ARRAYS.