SBIR/STTR Research Award

PE-MOCVD FERROELECTRIC NONVOLATILE RADIATION-HARD MEMORIES

Award identifier c04ce51307fa74510cc454e421a04593e5e51e5f8d7d1352e038c05290b11c2fAwarding agency Department of Defense · Navy

Award amount

$50,415

Program and phase

SBIR · Phase I

Award year

1990

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
RADIANT TECHNOLOGIES, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Q2CRJLBFGT41
Solicitation number
Not reported
Topic code
Not reported

Research abstract

FERROELECTRIC MATERIALS HAVE BEEN SUCCESSFULLY INTEGRATED WITH BOTH CMOS AND GAAS SEMICONDUCTOR TECHNOLOGIES TO CREATE NONVOLATILE MEMORIES. FERROELECTRIC MATERIALS HAVE ALSO DEMONSTRATED IMMUNITY TO RADIATION DAMAGE AND ARE CURRENTLY BEING DEVELOPED ON TWO SEPARATE GOVERNMENT EFFORTS FOR STRATEGIC LEVEL SYSTEMS. HOWEVER, THE COMPLEX METAL OXIDE CERAMIC BEING USED IN THESE COMMERCIAL AND MILITARY DEVELOPMENT PROGRAMS HAS SEVERAL DISTINCT ISSUES WHICH AFFECT PERFORMANCE. THESE ISSUES INCLUDE PURITY, STRAIN INDUCED CLAMPING, AND HIGH PROCESS TEMPERATURES. THIS PROPOSAL WILL DEVELOP A PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITION (PE-MOCVD) PROCESS WHICH WILL ATTACK THE ISSUES LISTED AND RESULT IN HIGHER QUALITY FILMS.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

6 SBIR/STTR records share this UEI (1990–2026). Reported award amounts total $3,312,901. Reported amounts are not federal obligations.

Phases: Phase II, Phase I

Agencies: Department of Defense

Agency intelligence

Department of Defense

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