High density molecular-electronic memories (BMDO/02-214B)

"A recognized trend in the computer industry is the continuing search for smaller andless dissipative computer elements. Since the invention of the transistor and itsincorporation into integrated circuits by Noyce and Kilby in 1959, increasing numberof transistors have been packed together to form devices such as memory,microprocessors, and logic modules. The success of the industry is dependent uponits reliance on the process of scaling known as Moore's Law. This naturally poses thequestion: What are the physical limits that determine the progress of miniaturization.Molecular dimensions represent a reasonable limit for scaling of electronic devices.Recently, several publications have reported on discoveries of molecular-tunnel diodeswhich can jump between two dissipative states, and can store information in one ofthose states. Molecules of Hemiquinones have been shown to switch reversibly betweentwo states, when they were interrogated with a STM. One of these states was shown tobe electrically conductive. The experiment indicated clearly the presence of memoryof the conductive state. It is proposed to repeat the experiment with the moleculesattached to pairs of nanoscale electrodes. This configuration will permit fullintegration and formation of DRAM and SRAM components of unprecedented density in theterabit range, with very low power consumption. The development of molecular-memory components suitable for integrated circuits willper