Space Qualified GaN Communication Technology

We propose to investigate wide band gap Gallium Nitride (GaN)semiconductors for K-band and Ka-Band power applications for high reliability spacecraft as well as commercial communications. High electron velocity in AlGaN/GaN heterostructure devicesindicate significant potential for fabrication of mm-wave HFET devices. RF output power of 10-12 W/mm with power-added efficiency approaching the ideal values for class A and B operation is available from AlGaN/GaN HFETs up through 30 GHz. Single device(4W) high power amplifiers are projected with high efficiency (exceeding 50%) are projected in phase I. High temperature life-test of amplifiers built during phase I will be examined to predict MTTF at conventional temperatures as well as at elevatedoperating temperatures. Key attributes to achieving reliability on GaN include a stable passivation technology (to eliminate gate lag), stable gate technology (to achieve high breakdown voltage), and proper heating sinking (to achieve optimal channeltemperatures).(1) Ultra high power internally matched FETs, (2) Ultra high power MMICs, (3) High IP3 driver amplifiers, (4) Base station amplifiers, (5) High Power handling distribution switches, (6) High temperature sensors for automotive and aircraftengines.