High Yield, Single-Crystal Silicon Carbide Production

The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which will in turn improve dramatically the economics of SiC commercial production. SiC remains unable to gain widespread acceptance in mainstream semiconductor device markets in part because of the high cost. That is, it is economically inefficient to fabricate devices from small area semiconductor materials. SiC will impact high power, high temperature devices.