60 GHZ IMPATT DIODES

GALLIUM ARSENIDE (GAAS) IMPATT DIODES ARE THE PRIMARY CANDIDATES FOR USE AS THE ACTIVE ELEMENT IN 60 GHZ SOLID STATE COMBINATORIAL (OR ACTIVE APERTURE) TRANSMIT POWER AMPLIFIERS FOR LONG RANGE WIDEBAND INTERSATELLITE COMMUNICATION LINKS. IN THIS APPLICATION A MULTIPLICITY OF IDENTICAL 60 GHZ IMPATT DIODES (AND "BUILDING BLOCK" AMPLIFIER STAGES) ARE REQUIRED, EACH OF MAXIMUM ACHIEVABLE EHF OUTPUT POWER AND DC-EHF CONVERSION EFFICIENCY, IN ORDER TO MINIMIZE THE COMPLEXITY AND PRIMARY POWER CONSUMPTION AND ENHANCE THE RELIABILITY OF THE OVERALL TRANSMITTER. ACCORDINGLY, LNR PROPOSES A PHASE I STUDY PROGRAM TO INVESTIGATE AND PERFORM TRADEOFF ANALYSES ON ALTERNATIVE 60 GHZ GAAS IMPATT DEVICE DESIGNS, WITH RESPECT TO SUCH ASPECTS AS EPITAXIAL GAAS DOPING PROFILE AND GROWTH TECHNIQUE, IMPATT DIODE CHIP AND PACKAGING GEOMETRY, AND EMBEDDING CONFIGURATION AND THEIR RESPECTIVE IMPACT ON RF PERFORMANCE. THE PROPOSED STUDY WILL CULMINATE IN A PRELIMINARY IMPATT DIODE PERFORMANCE SPECIFICATION AND A TASK DEFINITION FOR A PHASE II PROOF OF CONCEPT (POC) IMPATT DIODE AND AMPLIFIER IMPLEMENTATION EFFORT.