FIELD-EFFECT TRANSISTOR (BICFET)

MAXIMUM SPEED OF OPERATION AND HIGH TRANSCONDUCTANCE OF TRANSISTORS HAVE BEEN AMONG THE DRIVING FORCES TOWARD SUBMICRON MICROMINIATURIZATION WITHIN THE PAST DECADE. ADVANCES TOWARD THESE GOALS HAVE RESULTED IN AN EVER INCREASING SPATE OF NEW DEVICES, AMONG THEM THE HEMT, MODFET, TRANSISTOR, THE PERMEABLE BASE TRANSISTOR, ETC. RECENTLY, A NEW DEVICE HAS BEEN PROPOSED: THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) THAT FEATURES VERY HIGH CURRENT OPERATION, VERY HIGH CURRENT GAIN AND, THUS, VERY HIGH TRANSCONDUCTANCE AND LOW INPUT CAPACITANCE. AS PROPOSED, THE BICFET DOES NOT APPEAR TO THAVE THE PUNCH-THROUGH CONSTRAINTS OF THE MOSE OR BIPOLAR TRANSISTORS AND MAY BE SCALED TO LESS THAN 100NM. THE BICFET CONCEPT IS A NEW AND INTERESTING CONCEPT, AND MAY HAVE APPLICABILITY TO A VARIETY OF OTHER DEVICES; BUT THE DETAILS OF THE BICFET OPERATION NEED SIGNIFICANT FURTHER EVALUATION. THE PURPOSE OF THIS PHASE I DOCUMENT IS TO DESCRIBE A PROGRAM FOR INITIATING A THEORETICAL EVALUATION OF THE OPERATIONS PROPERTIES BICFET, THROUGH APPLICATION OF AN EXISTING SEMICONDUCTOR NUMERICAL ALGORITHM. THE GOAL OF THE PROGRAM IS TO ASSIST IN THE DEVELOPMENT OF THE STRUCTURE.