SBIR Phase I: Development of Efficient Short-Wavelength Radiation Sources For Next-Generation Lithography

This Small Business Innovation Research (SBIR) Phase I project will pursue the development of novel plasma technologies for creating highly efficient, short-wavelength radiation sources for use in next generation semiconductor chip manufacturing. The development of plasma radiation sources that efficiently emit light at wavelengths near 13.5 nm is crucial to the expected emergence of EUV lithography as the primary technique used in manufacturing integrated circuits and DRAM near the end of this decade. Well-tested state-of-the-art plasma simulation tools and atomic physics databases will be applied to guide the development of highly efficient laser-produced plasma (LPP) radiation sources. Simulations will be used to identify promising laser beam parameters and target compositions that very efficiently emit light at 13.5 nm. In concert with this, experiments will be conducted to diagnose the characteristics of potential high conversion efficiency plasma sources, and to develop techniques for utilizing these sources in EUV lithography systems. Commercially, this project will lead to lower cost, more efficient, and more robust EUV lithography light sources for use in the manufacturing of next-generation semiconductor chips. Additionally, this project will lead to the development of techniques applicable to the production of short-wavelength radiation sources for use in the fields of medical and defense technology.