Planar Technology for GaN Light-emitting Devices by Ion Implantation

The introduction of planar technology lo the fabrication of gallium nitride light-emitting and laser diodes will significantly reduce costs of manufacturing and allow flip-chip bonding of the lasers for efficient heat removal. Standard reactive ion etching of via holes to make contact to the rear silicon doped n-type region will be replaced by ion implantation. Silicon ions will be implanted through the undoped active region to form the shunting path for the contact. The p-type region at the surface will be created by implantation of magnesium ions. Shadow masks will define the appropriate regions. Materials analysis techniques will be used for locating the positions of the implants. Simple wire bonds will be made on the surface plane to evaporated metal contacts. Devices will be tested, and their operating characteristics will be analyzed. If the results are as promising as is anticipated, then Implant Sciences expects to become a manufacturer of nitride-based light emitters. Commercial Potential Nitride semiconductor devices including light-emitters and electronic amplifiers have vast commercial potential as display units, for optical storage, and for high power amplifier applications. Planar technology will help to reduce device processing costs.