SBIR/STTR Research Award

Reduced Parasitic Lasing in Ti:Sapphire Lasers: Removing a Bottleneck to New Ways of Acceleration

Award identifier a6192074a2adbb24145369f070d8bbdb051adba0409f8a4cd67fa946b0f9fd43Awarding agency Department of Energy

Award amount

$98,458

Program and phase

SBIR · Phase I

Award year

2007

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Crystal Systems, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
DE-PS02-06ER06-30
Topic code
31

Research abstract

New, ultrafast, ultra-intense solid state lasers can be efficient sources of accelerated particle beams in applications ranging from high energy physics research to real world medical applications. However, parasitic lasing represents a severe bottleneck to scaling-up this new technology. Removing this bottleneck would efficiently bring accelerator technology to a wide range of real world problems. In this project, parasitic lasing will be reduced by a series of growth and post-growth treatments, in order to allow the production of large Ti:sapphire crystals without parasitic lasing. The crystals will be treated with varying oxidation states, as well as with other reactions on the surface, to provide a homogenous crystal with reduced parasitic lasing. Commercial Applications and other Benefits as described by the awardee: In addition to the application for High Energy Physics, the technology could be used in proton therapy for the treatment of cancer with compact efficient sources of high energy protons.

Technology keywords

Not reported

Agency intelligence

Department of Energy

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