SBIR/STTR Research Award
SHORT WAVELENGTH ALGAAS DIODE LASERS
Award amount
$498,129Program and phase
SBIR · Phase IIAward year
1990Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- Northeast Semiconductor Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
THIS IS A PROPOSAL TO INVESTIGATE THE CONSTRUCTION OF EFFICIENT SEMICONDUCTOR DIODE LASERS WHICH OPERATE AT WAVELENGTHS FROM 680 NM TO 790 NM. THE LASERS IN THIS PROJECT WILL BE CONSTRUCTED FROM ALGAAS QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY (MBE). A SPECIAL 850 NM QUANTUM WELL LASER SUPERLATTICE STRUCTURE DEVELOPED BY THIS COMPANY FOR GROWTH BY MBE WILL BE ADAPTED FOR SHORTER WAVELENGTH OPERATION. ALSO, NEW STRUCTURES WILL BE DEVELOPED FOR LASING WAVELENGTHS AS SHORT AS 680 NM. THE LASER STRUCTURESWILL BE OPTIMIZED TO OBTAIN LOW THRESHOLD, HIGH EFFICIENCY OPERATION. ATTENTION WILL BE GIVEN TO REPRODUCIBILITY OF SPECIFIC WAVELENGTHS WITHIN THE ABOVE WAVELENGTH RANGE.
Technology keywords
Not reported