SBIR/STTR Research Award

Novel Approach to the Growth of Single Crystalline Relaxors

Award identifier 2f5d8c223ebf120f8ce194e40b4c5ab320e3776fe29270e46fa418544c635ebcAwarding agency Department of Defense · Navy

Award amount

$69,975

Program and phase

SBIR · Phase I

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
NZ APPLIED TECHNOLOGIES CORP.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Single-crystals of PMN-PT and other excellent ferroelectric materials hold the promise of realizing the next generation of high performance piezoelectric transducers. Presently, bulk single crystal growth techniques are severely hampered for producing this type of materials, due to the difficulties caused by lead evaporation and the formation of the other phases. Epitaxial growth of very thick films is a favorable, alternative, approach to obtaining large area, high purity single-crystals. Such technical approach is currently the production method for large transparent single-crystalline ZnS and ZnSe crystals for IR window fabrication. NZ Applied Technologies has developed an innovative low cost process which is well suited to produce large single crystalline PMN-PT. This novel process has unique deposition capabilities of very low cost , large area , and very thick film capability. Based on our initial success in epitaxial growth of relative thick films (25¿m), in Phase I, we will optimize our process to grow large area single-crystalline PMN-PT disk of a few mm in thickness.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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