A Giant Magnetoresistive Memory

Two new technologies will be investigated for application to achieving super-high-density memories. The company is currently developing a magnetic/solid-state memory system without any mechanical motion. This Permanent Random Access Memory (PRAM) comprises an addressable array of micron-scale read and write elements in contact with a magnetic storage medium on a single substrate, with random addressing to any array element. Giant magnetoresistive (GMR) memory films will be fabricated and tested for use as PRAM elements. The company has already fabricated GMR films, which exhibited GMR a factor of 10 or more higher than anisotropic magnetoresistance values. If the new technologies can be successfully applied to the PRAM fabrication process, then the whole memory, selection electronics and all, will be deposited on the same substrate at the same time, with no added deposition steps or processes. The result will be a compact (10 Gbit/cm2 to 1 Tbit/CM2), fast (10 ns), inexpensive, random-access, quickly alterable,, rugged, nonvolatile memory. A 64 bit, GMR PRAM array will be designed and fabricated in Phase I. The GMR array will undergo comprehensive tests to evaluate memory performance and provide parametric data.