SUBMICROMETER SILAYER ELECTRON-BEAM RESIST OF CHLOROMETHYL STYRENE AND AROMATIC SILICON-CONTAINING COPOLYMER

AS SWITCHING TIME REQUIREMENTS AND CHIP SIZES DECREASE, SUBMICRON GEOMETRIES WILL BE AN INEVITABLE TREND IN THE INTEGRATED CIRCUIT INDUSTRY IN THE 1990S. IN ORDER TO ACHIEVE THE REQUIRED SMALL GEOMETRIES AND HIGH YIELDS, STRINGENT DEMANDS WILL BE MADE ON RESIST TECHNOLOGY. ALTHOUGH THERE ARE MANY ELECTRON-BEAM RESISTS WHICH HAVE SUBMICRON RESOLUTION, NONE OF THEM TOTALLY MEET ALL PERFORMANCE REQUIREMENTS. DUE TO THE INHERENT CHARACTERISTICS OF HIGH GLASS TRANSITION TEMPERATURE, EFFECTIVE ADHESION, THERMAL STABILITY, AND DRY ETCHING DURABILITY OF AROMATIC SILICON-CONTAINING POLYMER AND THE HIGH RADIATION SENSITIVITY OF CHLOROMETHYL STYRENE, COPOLYMERS OF CHLOROMETHYL STYRENE AND SEVERAL AROMATIC SILICON-CONTAINING MONOMERS WILL BE INVESTIGATED AS HIGH RESOLUTION ELECTRON-BEAM BILAYER RESISTS. THE RESIST SENSITIVITY IS PROPORTIONAL TO THE MOLECULAR WEIGHT OF THE COPOLYMER AND MUTUALLY INCOMPATIBLE WITH RESOLUTION, WHICH IS A FUNCTION OF POLYDISPERSITY. IMPROVEMENT OF ADHESION, THERMAL STABILITY, AND DRY ETCHING DURABILITY IS OFTEN AT THE EXPENSE OF SENSITIVITY. THUS, THE EFFECTS OF THE MOLECULAR STRUCTURE AND THE SYNTHETIC PARAMETERS ON THESE PROPERTIES WILL BE STUDIED. AS THE LITHOGRAPHIC PROCESS IS VITAL FOR DEVELOPING A NEW SUBMICRON RESIST SYSTEM, THE PROCESSING PARAMETERS WILL BE OPTIMIZED FOR THE CHLOROMETHYLSTYRENE AND AROMATIC SILICON-CONTAINING COPOLYMER WITH OPTIMUM MOLECULAR DESIGN IN ORDER TO OBTAIN A THERMALLY STABLE AND DRY ETCHING RESISTANT ELECTRON-BEAM RESIST WITH HIGH SENSITIVITY AND RESOLUTION.