SBIR/STTR Research Award
HIGH POWER 810 NM DIODE LASER FOR SPACE COMMUNCATIONS
Award amount
$63,301Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- SDL Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
SDL proposes to develop a high power semiconductor laser producing greater than 1 W of continuous-wave, diffraction-limited power at a wavelength of 810 nm using a new material system that offers much higher manufacturability at wavelengths below 850 nm. SDL will use this material in a MOPA configuration to realize a laser for a free space laser communication link and will insert the demonstrated laser into a BMDO-funded testbed.
Technology keywords
Not reported