Doped Silicide OHMIC Contacts To Silicon Carbide

OHMIC CONTACTS ARE KEY TO THE IMPLEMENTATION OF SILICON CARBIDE (SIC) HIGH POWER, HIGH TEMPERATURE DEVICES. TO DATE, CONTACTS TO SiC MADE USING CONVENTIONAL TECHNIQUES HAVE DEMONSTRATED NEITHER LOW CONTACT RESISTANCES NOR LONG TERM STABILITY. IN PHASE I WE WILL DEVELOP LOW RESISTANCE SILICIDE BASED OHMIC CONTACTS SPECIFICALLY AIMED AT SiC HIGH TEMPERATURE, HIGH POWER DEVICES. CONTACTS WILL BE FABRICATED USING A NOVEL DOPING TECHNIQUES TO HEAVILY DOPE THE SEMICONDUCTOR-SILICIDE INTERFACE AND VIA A UNIQUE SILICIDE FORMATION PROCESS. CONTROLLED FORMATION OF SILICIDES WILL ELIMINATE THE PROBLEMS OF EXCESS CARBON AND CARBIDE FORMATION AT THE CONTACT INTERFACE. IN PHASE II, WE WILL EVALUATE THE LONG TERM ELECTRICAL AND STRUCTURAL STABILITY OF THE CONTACTS IN HIGH POWER, HIGH TEMPERATURE DEVICES. IN PHASE III, SPECIFIC DOD AND COMMERCIAL DEVICES WILL BE TARGETED FOR MANUFACTURE.