GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating temperatures, and higher saturated electron velocities than either GaAs or Si. However, these material systems are still hampered by material quality and low electron mobility. APA Optics, Inc. will solve this problem by combining the high temperature properties of wide bandgap GaN with the superior mobility of GaAs through the use of strained layer superlattices. These GaAs(x-1)N(1-x) superlattices form the basis for a new and high performance transistor capable of operating at high temperature. This approach will substantially reduce the temperature needed for single crystal material. The low temperatures should allow two dissimilar materials to be deposited together without intermixing and thereby making possible GaAs/GaN layers with atomic dimensions. In Phase I, APA Optics, Inc will deposit and characterize the strained layer superlattices for crystalline, electrical and optical quality.