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Not Available ZnGeP2 is an important non-linear optical material currently in use for frequency shifting high power lasers to cover the mid-IR band between 2 to 10 microns. Material defects and impurities in currently available material limit laser power, total spectral range, efficiency, and produce absorption bands. Spire proposes to develop superior quality material by deposition of homoepitaxial films by metalorganic chemical vapor deposition (MOCVD) using a variable pressure reactor and high purity sources with low cracking temperatures and high vapor pressures. New materials and techniques are expected to give greatly improved results and low defect material. In Phase II, in-situ diagnostics using multiple wavelength ellipsometry will give optimal compositional control further reducing defect density and giving material with properties superior to bulk grown crystals, analogous to homoepitaxial GaAs films on GaAs substrates. Reduced absorption and increased laser damage thresholds are expected.