Controlled Nucleation and Growth in Semiconductor Epitaxy

"Thermal budget is the most important parameter in the fabrication of high quality epitaxial structures. Many fabrication techniques or processes, however, cannot survive the elevated temperatures. The use of ultrasound to promote the surface atomicmobility during fabrication can reduce the thermal budget, thereby providing new methods that cannot be considered at elevated temperatures. Important widegap materials such as SiC and GaN can possibly be fabricated at reduced temperature with greatlyreduced defect densities."