Low Power Monolithic Microwave Integrated Circuits

In Phase I of DARP MIMIC program, Hittite Microwave Corporation, in co-operation with Harry Diamond Laboratories, has developed a GaAs MMIC chip which performs complete RF functions of an FM-CW radar designed for proximity fuze applications in Army's Multi-Option Fuze for Artillery (MOFA). The RF package for this fuze is a miniature IC package measuring .25" x .25" x .09". The RF assembly integrated with a single-patch antenna is about the size of a five-cent coin. This MMIC radar consumes .9 to 1.25 watts of DC power. In Phase 2 of the MIMIC program, Hittite has a task of developing a smaller and lower-cost chip which consumes much less DC power for fuzing applications in small munitions. MMIC processes based on enhancement/depletion-mode MESFET and hetero-junction bipolar transistor (HBT) devices are becoming available as stabilized production processes. These new device technologies will be utilized to develop lower cost, less power hungry radar MMIC with added performance capabilities. In addition to the basic radar function, the new radar chips to be developed in this program will incorporate ECM-resistance and HPM protection capabilities. The MMIC functions to be developed for these added capabilities are: advanced modulation and demodulation circuits and self-activated switch/attenuator used as a limiter. The proposed Phase I study will lead to design, simulation, performance analysis, and preliminary layout of the low-cost, low-power MMIC radar chip with added jam/burn-out resistance capabilities.